Ordering number : EN7198A
2SA1179N / 2SC2812N
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Tran...
Ordering number : EN7198A
2SA1179N / 2SC2812N
SANYO Semiconductors
DATA SHEET
PNP /
NPN Epitaxial Planar Silicon
Transistors
2SA1179N / 2SC2812N Low-Frequency General-Purpose
Amp Applications
Features
Miniature package facilitates miniaturization in end products. High breakdown voltage.
Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Marking : 2SA1179N : M / 2SC2812N : L
ICBO IEBO hFE
fT
Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1mA 2SC2812N : VCE=6V, IC=1mA 2SA1179N : VCE=--6V, IC=--10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A
Ratings (--)55 (--)50 (--)5
(--)150 (--)300
(--)30 200 150
--55 to +150
Unit V V V mA mA mA
mW °C °C
Ratings min typ
200 100
(180) (4.0)3.0 (--0.15)0.1
(--)55 (--...