2SC2778

Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm ■ Features Optimum for RF amplification, oscillation, mixing, and IF of 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 FM/AM radios Mini type package, allowing downsizing of the equipment and 5˚ automatic insertion through the tape packing and the magazine 1 2 (0.65) packing (0.95) (0.95) / ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 2.90+–00..0250 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 30 mA lifecy , dis Collector power dissipation PC 200 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ Marking Symbol: K 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 20 V M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V /Dis ma Forward current transfer ratio * hFE VCE = 10 V, IC = 1 mA 70 250 ...