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ST110S16P2VLPBF Dataheets PDF



Part Number ST110S16P2VLPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Phase Control Thyristors
Datasheet ST110S16P2VLPBF DatasheetST110S16P2VLPBF Datasheet (PDF)

www.DataSheet.co.kr ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES • Center gate • International standard case TO-209AC (TO-94) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Hermetic glass-metal case with (Glass-metal seal over 1200 V) TO-209AC (TO-94) ceramic insulator • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 110 A TYPICAL APP.

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www.DataSheet.co.kr ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES • Center gate • International standard case TO-209AC (TO-94) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Hermetic glass-metal case with (Glass-metal seal over 1200 V) TO-209AC (TO-94) ceramic insulator • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 110 A TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 110 TC 90 175 2700 2830 36.4 33.2 400 to 1600 100 - 40 to 125 V μs °C kA2s A UNITS A °C I2t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 ST110S 12 16 1200 1600 1300 1700 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 20 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94393 Revision: 17-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 85 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 110 90 175 2700 2830 2270 UNITS A °C A Sinusoidal half wave, initial TJ = TJ maximum 2380 36.4 33.2 25.8 23.5 364 0.90 0.92 1.79 1.81 1.52 600 1000 kA2s V m V mA kA2s t = 0.1 to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs VALUES 500 2.0 μs 100 UNITS A/μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 20 UNITS V/μs mA www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94393 Revision: 17-Aug-10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 180 90 40 2.9 1.8 1.2 10 TJ = TJ maximum, tp  5 ms TEST CONDITIONS TJ = TJ maximum, tp  5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 5 1 2.0 20 5.0 150 3.0 mA V mA MAX. UNITS Vishay Semiconductors W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque, ± 10 % Approximate weight Case style See dimensions - link at.


ST110S16P2PBF ST110S16P2VLPBF ST110S16P2VPBF


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