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ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 110 A
FEATURES
• Center gate • International standard case TO-209AC (TO-94) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Hermetic glass-metal case with (Glass-metal seal over 1200 V)
TO-209AC (TO-94)
ceramic insulator
• Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
PRODUCT SUMMARY
IT(AV) 110 A
TYPICAL APPLICATIONS
• DC motor controls • Controlled DC power supplies • AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) IT(RMS) 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical TEST CONDITIONS VALUES 110 TC 90 175 2700 2830 36.4 33.2 400 to 1600 100 - 40 to 125 V μs °C kA2s A UNITS A °C
I2t
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 08 ST110S 12 16 1200 1600 1300 1700 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 20 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 94393 Revision: 17-Aug-10
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 85 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM
reapplied
VALUES 110 90 175 2700 2830 2270
UNITS A °C
A
Sinusoidal half wave, initial TJ = TJ maximum
2380 36.4 33.2 25.8 23.5 364 0.90 0.92 1.79 1.81 1.52 600 1000 kA2s V m V mA kA2s
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs VALUES 500 2.0 μs 100 UNITS A/μs
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 20 UNITS V/μs mA
www.vishay.com 2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 94393 Revision: 17-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
ST110SPbF Series
Phase Control Thyristors (Stud Version), 110 A
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 180 90 40 2.9 1.8 1.2 10 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 5 1 2.0 20 5.0 150 3.0 mA V mA MAX. UNITS
Vishay Semiconductors
W A V
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting torque, ± 10 % Approximate weight Case style See dimensions - link at.