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2SC2715

Part Number	2SC2715
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Application...
Datasheet	2SC2715 PDF File

Overview

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 2dB (typ.
) (f = 10.
7 MHz) · Recommended for FM IF, OSC stage and AM CONV.
IF stage.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 50 10 150 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Characteristics Symbol ...

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