2SC2703

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2703 Audio Power Amplifier Applications 2SC2703 Unit: mm High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 5 1 0.1 900 150 −55 to 150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 30 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA hFE (1) (Note) VCE = 2 V, IC = 100 mA hFE (2) VCE (sat) VBE fT Cob VCE = 2 V, IC = 800 mA IC = 800 mA, IB = 80 mA VCE = 2 V, IC = 800 mA VCE = 2 V, IC = 100 mA VCB = 10 V, f = 1 MHz Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 30 ― ― V 100 ― 320 40 ― ― ― ― 0.5 V ― 0.9 1.5 V ― 150 ― MHz ― 13 ― pF 1 2004-07-07 Marking C2703 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2SC2703 2 2004-07-07 Collector current IC (m...