NEC
NPN SILICON TRANSISTOR
2SC2688
DESCR IPTION
The 2SC2688 is designed for use in Color TV chroma output circuits.
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NEC
NPN SILICON
TRANSISTOR
2SC2688
DESCR IPTION
The 2SC2688 is designed for use in Color TV chroma output circuits.
PACKAGE DIMENSIONS
in miłlimeters (inches)
FEATURES
High Electrostatic-Discharge-Resistance. (E-B reverse bias, C= 2 300 p F) ESDR : TYP. 1 000 V
Low Cre High fT Cre;:;;;: 3.0 pF (Ves= 30 V) fT ;ii;; 50 MHz (Vce = 30 V, Ie = -10 mA)
~
e_~;....+-+--+-;
N
c:i L..l-+..,j,....-ł--1+1 00 rti
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature . . . . . . . . . . . . . -55 to +150 °C
Junction Temperature . . . . . . . . . . . 150 °C Maximum
Maximum Power Dissipation's
Total Power Dissipation (Ta= 25 °C) . . . . . . . . 1.25 W
Total Power Dissipation (Tc= 25 °C) .... . ..... 1O W
Maximum Voltages and Gurrent (Ta= 25 °C)
Vcso Collector to Base Voltage . . . . . . . 300 V
Vceo Collector to Emitter Voltage. . . . . 300 V
Veso Emitter to Base Voltage . . . . . . . . 5.0 V
Ie
Collector Gurrent . . . *. . . . . . . . . 200 mA
0.55 ~ggg (0.021)
2.3 2.3 (0.090) (0.090)
[4 *+)
1.2 (0.047)
1. Emitter
2. Collector .connected to mountingpiane 3. Base
ELECTRlCAL CHARACTERISTICS (Ta= 25 °C)
SYMBOL
CHARACTER ISTIC
h FE
fT
C re lcso
Ie a o
Vcehatl
OC Current Gain Gain Bandwidth Produet Feedback Capacitance Collector Cutoff Cu rrent Emitter Cutoff Current Collector Saturation Voltage
*Pu lsed PW ~ 3 50 JlS, Outy Cycle ~ 2 %
MIN. 40 50
Classification of h FE
Test Conditions : Vce = 10 V, Ie = 10 mA
K 160 to 250
TYP. 80 80
MAX. 250
3....