2SC2669

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 50 10 200 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-base time constant Power gain ICBO IEBO VCB = 35 V, IE = 0 VEB = 4 V, IC = 0 hFE (Note) VCE = 12 V, IC = 2 mA VCE (sat) VBE IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA fT Cob Cc･rbb’ Gpe VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1) Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 40 ¾ 240 ¾ ¾ 0.4 V ¾ ¾ 1.0 V 100 ¾ ¾ MHz ¾ 2.0 3.2 pF ¾ ¾ 50 ps 27 30 33 dB 1 2003-03-27 2SC2669 Figure 1 Gpe Test Circuit Y Parameters (typ.) (1) (common emitter f...