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SS10PH45 Dataheets PDF



Part Number SS10PH45
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description High Current Density Surface Mount Schottky Rectifier
Datasheet SS10PH45 DatasheetSS10PH45 Datasheet (PDF)

www.DataSheet.co.kr New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halo.

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www.DataSheet.co.kr New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A IR TJ max. 10 A 45 V 200 A 20 mJ 0.56 V 5.5 μA 175 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A , TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG SYMBOL SS10PH45 10H45 45 10 200 20 - 55 to + 175 V A A mJ °C UNIT Document Number: 89057 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product SS10PH45 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage IF = 10 A IF = 5 A IF = 10 A Reverse current Typical junction capacitance Rated VR 4.0 V, 1 MHz TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. 0.54 0.64 0.45 0.56 IR (2) CJ 5.5 3.9 400 MAX. 0.72 V 0.64 80 10 μA mA pF UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance per diode Note (1) Units mounted on recommended PCB 1 oz. pad layout SYMBOL RJA RJL (1) SS10PH45 60 UNIT °C/W 3 ORDERING INFORMATION (Example) PREFERRED P/N SS10PH45-M3/86A SS10PH45-M3/87A SS10PH45HM3/86A SS10PH45HM3/87A (1) (1) (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89057 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product SS10PH45 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 12 100 Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Resistive or Inductive Load 10 TA = 175 °C 10 TA = 150 °C 8 6 1 TA = 125 °C 0.1 4 2 TL measured at the Cathode Band Terminal 0.01 TA = 25 °C 0.001 0 0 25 50 75 100 125 150 175 0.0001 10 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 8.0 D = 0.8 6.0 D = 0.3 D = 0.2 D = 0.1 2.0 D = tp/T 0 0 2 4 6 8 10 12 tp D = 1.0 T 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 4.0 Junction Capacitance (pF) D = 0.5 Average Power Loss (W) 100 10 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Ambient TA = 175 °C 10 TA = 150 °C TA = 125 °C 1 10 TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V.


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