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ESD5V3L1U-02LRH

Infineon Technologies AG

Low Capacitance TVS Diode

www.DataSheet.co.kr ESD5V3L1U-02LRH Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines up ...


Infineon Technologies AG

ESD5V3L1U-02LRH

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www.DataSheet.co.kr ESD5V3L1U-02LRH Low Capacitance TVS Diode ESD / transient protection of high-speed data lines up to: IEC61000-4-2 (ESD): ±30 kV (air / contact) IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns) IEC61000-4-5 (surge): 6 A (8/20 µs) Reverse working voltage: 5.3 V max. Very low reverse current: < 1 nA typ. Low capacitance: < 2 pF . Very low clamping voltage: 10 V typ. at positive transients, 2.5 V typ. at negative transients Very low series inductance down to 0.4 nH typ. Pb-free (RoHS compliant) package Applications Mobile communication FM antenna protection USB 2.0, 10/100/1000 Ethernet, Firewire, DVI, Consumer products (STB, MP3, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals ESD5V3L1U-02LRH 2 1 Type ESD5V3L1U-02LRH Package TSLP-2-17 Configuration 1 line, uni-directional Marking E8 1 2010-02-26 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ESD5V3L1U-02LRH Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VESD I pp T op T stg Value Unit ESD (air / contact) discharge 1) Peak pulse current (tp = 8 / 20 µs)2) Operating temperature range Storage temperature 30 6 -55...125 -65...150 kV A °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. Characteristics typ. max. Unit Reverse working voltage, from pin 1 to 2 Breakdown voltage I(BR) = 1 mA, from pin 1 to 2 VRWM V(BR) IR VCL 6 - <1 5.3 100 V Reverse curr...




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