www.DataSheet.co.kr
CXT3820 SURFACE MOUNT VERY LOW VCE(SAT)
w w w. c e n t r a l s e m i . c o m
NPN SILICON TRANSISTO...
www.DataSheet.co.kr
CXT3820 SURFACE MOUNT VERY LOW VCE(SAT)
w w w. c e n t r a l s e m i . c o m
NPN SILICON
TRANSISTOR
DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3820 is a very low VCE(SAT)
NPN transistor designed for applications where electrical and thermal efficiency are prime requirements. Packaged in an industry standard SOT-89 case, this device brings updated electrical specifications and characteristics suitable for the most demanding designs. MARKING: FULL PART NUMBER
SOT-89 CASE
Device is Halogen Free by design
FEATURES:
APPLICATIONS:
High Current (IC=1.0A) VCE(SAT)=0.28V MAX @ IC=1.0A SOT-89 surface mount package Complementary
PNP device: CXT7820 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
DC/DC Converters Voltage Clamping Protection Circuits Battery powered Cell Phones, Pagers, Digital Cameras, PDAs, Laptops, etc. SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA UNITS V V V A A mA W °C °C/W
80 60 5.0 1.0 2.0 300 1.2 -65 to +150 104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100µA 80 BVCEO IC=10mA 60 BVEBO IE=100µA 5.0 VCE(SAT) IC=100mA, IB=1.0mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=1.0A, IB=50mA VBE(ON) VCE=5.0V, IC=1.0A hFE ...