SI7236DP

www.DataSheet.co.kr Si7236DP Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0052 at VGS = 4.5 V 0.007 at VGS = 2.5 V ID (A)a 60 31 nC 60 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET APPLICATIONS Synchronous Rectification DC-DC Point-of-Load PowerPAK SO-8 6.15 mm S1 1 2 5.15 mm G1 S2 D1 D2 3 4 D1 G2 8 7 D1 D2 G1 D2 G2 6 5 Bottom View S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si7236DP-T1-E3 (Lead (Pb)-free) Si7236DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C Maximum Power Dissipation TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS Limit 20 ± 12 60a 60a 20.7b, c 16.6b, c 80 38 2.9b, c 46 29 3.5b, c 2.2b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t ≤ 10 s 26 35 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 2.2 2.7 Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). Th...