SI7186DP

www.DataSheet.co.kr Si7186DP Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) 0.0125 at VGS = 10 V ID (A)a 32g Qg (Typ.) 46 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm Primary Side Switch POL Intermediate Bus Converter D G Bottom View Ordering Information: Si7186DP-T1-E3 (Lead (Pb)-free) Si7186DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 80 ± 20 32g 32g 14.5b, c 11.5b, c 60 32g 4.5b, c 30 45 64 44 5.2b, c 3.3b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" F...