SI7120ADN

www.DataSheet.co.kr New Product Si7120ADN Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.021 at VGS = 10 V 0.031 at VGS = 4.5 V ID (A) 9.5 7.9 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 APPLICATIONS 3.30 mm 3.30 mm S 1 2 3 S S Primary Side Switch Synchronous Rectification D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7120ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 3.8 2.4 - 55 to 150 260 3.2 22 24 1.5 1.0 mJ W °C 9.5 7.6 40 1.3 10 s 60 ± 20 6.0 4.8 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 26 65 1.9 Maximum 33 81 2.4 °C/W Unit Notes: a. Surface mounted on 1" x 1" FR4 board. b. See solder profile (www.vishay.com/ppg?73257). Th...