SI7102DN

www.DataSheet.co.kr Si7102DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0038 at VGS = 4.5 V 0.0047 at VGS = 2.5 V ID (A)e 35 35 Qg (Typ.) 41 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile 100 % Rg Tested PowerPAK 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm Secondary Synchronous Rectification Point-of-Load D Load Switch G Bottom View S Ordering Information: Si7102DN-T1-E3 (Lead (Pb)-free) Si7102DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c, d Symbol VDS VGS Limit 12 ±8 35e 35e 25a, b 17.8a, b Unit V ID A IDM IS 60 35e 3.2a, b 52 33 3.8a, b 2.4a, b - 50 to 150 260 W PD TJ, Tstg °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the s...