SI6562DQ

www.DataSheet.co.kr Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V ID (A) "4.5 "3.9 "3.5 "2.7 P-Channel –20 0.050 @ VGS = –4.5 V 0.085 @ VGS = –2.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6562DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "4.5 "3.6 "30 1.25 1.0 P-Channel –20 "12 "3.5 "2.7 "30 –1.25 Unit V A W 0.64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70720 S-56944—Rev. B, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si6562DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS ...