SI6467BDQ

www.DataSheet.co.kr Si6467BDQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0125 @ VGS = -4.5 V -12 0.0155 @ VGS = -2.5 V 0.020 @ VGS = -1.8 V ID (A) -8.0 - 7.0 - 6.0 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6467BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 8.0 Steady State Unit V -6.8 -5.4 -30 A -0.95 1.05 0.67 -55 to 150 W _C ID IDM IS PD TJ, Tstg -6.5 -1.35 1.5 1.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72087 S-22382—Rev. A, 30-Dec-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 65 100 43 Maximum 83 120 52 Unit _C/W 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si6467BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -45...