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Si6466ADQ
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.014 at VGS = 4.5 V 0.020 at VGS = 2.5 V ID (A) 8.1 6.6
FEATURES
• Halogen-free • TrenchFET® Power MOSFETs • 100 % Rg Tested
RoHS
COMPLIANT
D
TSSOP-8
D S S G 1 2 3 4 Top View Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D 7 S 6 S 5 D S* N-Channel MOSFET G
* Source Pins 2, 3, 6 and 7 must be tied common.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.35 1.5 1.0 - 55 to 150 8.1 6.6 30 0.95 1.05 0.67 W °C 10 s 20 ±8 6.8 5.4 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 °C/W Unit
Document Number: 71182 S-80682-Rev. C, 31-Mar-08
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Si6466ADQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/µs VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 0.5 27 34 76 30 35 VDS = 10 V, VGS = 5 V, ID = 8.1 A 18 3.2 4 1.8 45 50 120 50 70 ns Ω 27 nC
a
Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD
Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.1 A VGS = 2.5 V, ID = 6.6 A VDS = 10 V, ID = 8.1 A IS = 1.35 A, VGS = 0 V
Min. 0.45
Typ.
Max.
Unit V
± 100 1 10 20 0.011 0.017 30 0.65 1.1 0.014 0.020
nA µA A Ω S V
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 VGS = 5 thru 2.5 V 24 2V 18 I D - Drain Current (A).