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SI6466ADQ Dataheets PDF



Part Number SI6466ADQ
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SI6466ADQ DatasheetSI6466ADQ Datasheet (PDF)

www.DataSheet.co.kr Si6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.014 at VGS = 4.5 V 0.020 at VGS = 2.5 V ID (A) 8.1 6.6 FEATURES • Halogen-free • TrenchFET® Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D 7 S 6 S 5 D S* N-Channel MOSFET G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unl.

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www.DataSheet.co.kr Si6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.014 at VGS = 4.5 V 0.020 at VGS = 2.5 V ID (A) 8.1 6.6 FEATURES • Halogen-free • TrenchFET® Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D 7 S 6 S 5 D S* N-Channel MOSFET G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.35 1.5 1.0 - 55 to 150 8.1 6.6 30 0.95 1.05 0.67 W °C 10 s 20 ±8 6.8 5.4 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 °C/W Unit Document Number: 71182 S-80682-Rev. C, 31-Mar-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si6466ADQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/µs VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 0.5 27 34 76 30 35 VDS = 10 V, VGS = 5 V, ID = 8.1 A 18 3.2 4 1.8 45 50 120 50 70 ns Ω 27 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70 °C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.1 A VGS = 2.5 V, ID = 6.6 A VDS = 10 V, ID = 8.1 A IS = 1.35 A, VGS = 0 V Min. 0.45 Typ. Max. Unit V ± 100 1 10 20 0.011 0.017 30 0.65 1.1 0.014 0.020 nA µA A Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 VGS = 5 thru 2.5 V 24 2V 18 I D - Drain Current (A).


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