SI5944DU

www.DataSheet.co.kr Si5944DU Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.112 at VGS = 10 V 0.171 at VGS = 4.5 V ID (A) 6a 4.9 Qg (Typ.) 2.2 nC FEATURES Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT PowerPAK ChipFET Dual 1 S1 G1 D1 2 3 S2 Marking Code CC XXX Lot Traceability and Date Code Part # Code G2 APPLICATIONS DC-DC Power Supply D1 D2 8 7 D1 D2 4 6 5 D2 G1 G2 Bottom View S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si5944DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 40 ± 20 6 4.87 3.28b, c 2.63b, c 10 8.33 1.68b, c 5 1.25 10 6.4 2.0b, c 1.3b, c - 55 to 150 260 a Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 52 62 Maximum Junction-to-Ambientb, f °C/W RthJC 15 18 Maxi...