SI5906DU

www.DataSheet.co.kr New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.031 at VGS = 10 V 0.040 at VGS = 4.5 V ID (A)a 6 8 nC 6 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK ChipFET Dual APPLICATIONS Network System Power DC/DC Marking Code 3. 0 D1 D2 CD m m m 1.8 m XXX Lot Traceability and Date Code G1 G2 Part # Code Bottom View Ordering Information: Si5906DU-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 6a 6a a, b, c 6 5.3b, c 25 6a 1.9b, c 10.4 6.7 2.3b, c 1.5b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Notes: a. Package limited b. Surface...