SI5513DC

www.DataSheet.co.kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 rDS(on) (W) 0.075 @ VGS = 4.5 V 0.134 @ VGS = 2.5 V 0.155 @ VGS = −4.5 V 0.260 @ VGS = −2.5 V ID (A) 4.2 3.1 −2.9 −2.2 Qg (Typ) 4 3 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EB XX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Part # Code Ordering Information: Si5513DC-T1 Si5513DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State −20 "12 Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 20 Unit V 4.2 3.0 10 1.8 2.1 1.1 3.1 2.2 0.9 1.1 0.6 −55 to 150 260 −2.9 −2.1 −10 −1.8 2.1 1.1 −2.1 −1.5 −0.9 1.1 0.6 W _C A Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The...