SI5504BDC

www.vishay.com Si5504BDC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 -30 RDS(on) () 0.065 at VGS = 10 V 0.100 at VGS = 4.5 V 0.140 at VGS = -10 V 0.235 at VGS = -4.5 V ID (A) 4a 4a -3.7 -2.8 Qg (TYP.) 2 nC 2.2 nC 1206-8 ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.8 mm 1 3.0 mm Top View 1 4 G2 3 S2 2 G1 S1 Bottom View FEATURES TrenchFET® Power MOSFETs Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC for portable applications Load switch D1 S2 G2 G1 Available Marking Code: EF Ordering Information: Si5504BDC-T1-E3 (Lead (Pb)-free) Si5504BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d,e TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C VDS VGS ID IDM IS PD TJ, Tstg 30 -30 ± 20 4a -3.7 3.8 -2.7 3.7 b,c -2.5 b,c 2.6 b,c -1.8 b,c 10 -10 2.5 -2.5 1.3 b,c -1.3 b,c 3.12 3.1 2 2 1.5 b,c 1.5 b,c 0.8 b,c 0.8 b,c -55 to 150 260 UNIT V A W °C THERMAL RESISTANCE RA...