SI5476DU

New Product N-Channel 60-V (D-S) MOSFET Si5476DU Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.034 at VGS = 10 V 0.041 at VGS = 4.5 V PowerPAK ChipFET Single ID (A)a 12 12 Qg (Typ.) 10.5 nC 1 2 Marking Code D3 DD 4 8D 7D 6S D G S AA XXX Lot Traceability and Date Code Part # Code 5 FEATURES Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile APPLICATIONS Load Switch for Portable Applications DC-DC Switch for Low Power Synchronous Rectification Intermediate Switch Driver for DC/DC Applications G RoHS COMPLIANT D Bottom View S Ordering Information: Si5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID IDM IS IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 60 ± 20 12a 12a 7b, c 5.6b, c 25 12a 2.6b, c 15 11.2 31 20 3.1b, c 2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical ...