SI5471DC

www.DataSheet.co.kr New Product Si5471DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.020 at VGS = - 4.5 V - 20 0.028 at VGS = - 2.5 V 0.062 at VGS = - 1.8 V ID (A)a, g -6 -6 -6 30 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches - Notebook - Netbook 1206-8 ChipFET ® 1 D D D D S D D G S G D Bottom View P-Channel MOSFET Ordering Information: Si5471DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range e, f Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM IS Limit - 20 ± 12 - 6a - 6a - 6a, b, c - 6a, b, c - 25 - 5.2 - 2.1b, c 6.3 4 2.5b, c 1.6b, c - 55 to 150 260 Unit V A PD TJ, Tstg W Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 40 50 Maximum Junction-to-Ambienta, c, d °C/W RthJF Maximum Junction-to-Foot (Drain) Steady State 15 20 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. See Reliability ...