2SC2570A

DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain Wide dynamic range : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity Loose products (500 pcs) Taping products (Box type) (2 500 pcs) Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units). ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Ratings 25 12 3.0 70 600 150 –65 to +150 Unit V V V mA mW °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10404EJ3V0DS00 (3rd edition) Date Published November 1999 N CP(K) Printed in Japan © 1980, 1999 2SC2570A ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Maximum Ava...