SI4866BDY

www.DataSheet.co.kr Si4866BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0053 at VGS = 4.5 V 0.006 at VGS = 2.5 V 0.0074 at VGS = 1.8 V ID (A)a 21.5 20.2 18.2 29.5 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Synchronous Rectifier Point-of-Load Synchronous Buck Converter SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free) Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 12 ±8 21.5 17.2 16.1b,c 12.9b,c 50 4.0 2.3b,c 20 20 4.45 2.85 2.50b,c 1.6b,c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 °C/W. Document Number: 70341 S09-0540-Rev. B, 06-...