SI4840BDY

www.DataSheet.co.kr Si4840BDY Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)d 19 15 nC 16 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free) Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G Synchronous Rectification POL, IBC - Secondary Side D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 40 ± 20 19 15 12.4a, b 9.9a, b 50 15 11 5 2.1a, b 6 3.8 2.5a, b 1.6a, b - 55 to 150 Unit V A mJ A TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 37 17 Maximum 50 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d....