SI4776DY

www.DataSheet.co.kr New Product Si4776DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.016 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A)a 11.9 5.5 nC 10.6 Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition SkyFETMonolithic TrenchFETPower MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D APPLICATIONS Notebook System Power and Memory - Low Side D G N-Channel MOSFET Schottky Diode Ordering Information: Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 30 ± 20 11.9 9.5 9.3b, c 7.5b, c 50 3.7 2.3b, c 10 5 4.1 2.6 2.5b, c 1.6b, c - 55 to 150 W mJ A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady State Symbol RthJA RthJF Typ. 40 24 Max. 50 30 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surf...