SI4200DY

www.DataSheet.co.kr Si4200DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 8a 7.9 Qg (Typ.) 3.6 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter - Game Console - Notebook System Power 8 7 6 5 Top View S1 S2 N-Channel MOSFET D1 D1 D2 D2 G1 G2 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Ordering Information: Si4200DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 25 ± 16 8a 6.9 7.3b, c 5.8b, c 30 2.3 1.7b, c 12 7.2 2.8 1.8 2.0b, c 1.3b, c - 55 to 150 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 58 38 Maximum 62.5 45 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum u...