SI1401EDH

www.DataSheet.co.kr New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.034 at VGS = - 4.5 V - 12 0.046 at VGS = - 2.5 V 0.070 at VGS = - 1.8 V 0.110 at VGS = - 1.5 V ID (A)a -4 -4 -4 -4 14.1 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Performance 1500 V 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS G R S D 2 5 D Marking Code BPX Part # code XXX G 3 4 S Top View Ordering Information: Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) Lot Traceability and Date code D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 12 ± 10 - 4a - 4a - 4a, b, c - 4a, b, c - 25 - 2.3 - 1.3b, c 2.8 1.8 1.6b, c 1.0b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-...