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2SC2512

Hitachi Semiconductor

Silicon NPN Triple Diffused Transistor

2SC2512 Silicon NPN Triple Diffused Application • VHF Amplifier • VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Em...


Hitachi Semiconductor

2SC2512

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Description
2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 — — 30 — 600 — 16 Typ — — — — — — 0.35 900 — 20 Max — — — 0.5 1 — 0.45 — 20 — pF MHz ps dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, Emitter common, f = 1 MHz VCE = 10 V, IC = 10 mA VCB = 10 V, IC = 5 mA, f = 31.8 MHz VCC = 12 V, IC = 2 mA, f in = 200 MHz, f OSC = 260 MHz, f out = 60 MHz VCC = 12 V, IC = 2 mA, f OSC = 260 MHz, Rg = 50 Ω, f in = 200 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Base time constant Conversion gain V(BR)EBO I CBO VCE(sat) hFE Cre fT rbb’ CC CG Noise figure NF — 3.8 5.5 dB 2 2SC2512 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 DC Current Transf...




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