SI4172DY

www.DataSheet.co.kr Si4172DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a 15 13 Qg (Typ.) 6.8 nC FEATURES Halogen-free TrenchFET® Power MOSFET Optimized for High-Side Synchronous Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 15 12 11b, c 9b, c 50 3.8 2.1b, c 22 24 4.5 2.8 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 69000 S-82665-Rev. A, 03-Nov-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ t ≤ 10...