2SC2480

Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm ■ Features 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 High transition frequency fT Mini type package, allowing downsizing of the equipment and 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C Marking Symbol: R 1: Base 2: Emitter 3: Collector JEITA: SC-59A Mini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-base voltage (Emitter open) c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage /Dis ma Forward current transfer ratio D ance type, Transition frequency * ten ce Reverse transfer capacitance ain nan (Common base) VCBO VEBO VBE hFE fT Crb IC = 100 µA, IE = 0 30 IE = 10 µA, IC = 0 3 VCB = 10...