SI4102DY

N-Channel 100 V (D-S) MOSFET Si4102DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.158 at VGS = 10 V 100 0.175 at VGS = 6 V ID (A)d 3.8 3.6 Qg (Typ.) 4.6 nC FEATURES TrenchFET® Power MOSFET 100 % UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Avalanche Current Single Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 3.8 3 2.7a, b 2.1a, b 8 4 2a, b 6 1.8 4.8 3 2.4a, b 1.5a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t  10 s Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on TC = 25 °C. Symbol RthJA RthJF Typical 42 21 Maximum 53 26 Unit V A A mJ W °C Unit °C/W Doc...