SI3471CDV

www.DataSheet.co.kr New Product Si3471CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.027 at VGS = - 4.5 V - 12 0.036 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V ID (A)a -8 -8 - 7.5 20 nC Qg (Typ.) FEATURES TrenchFET® Power MOSFET PWM Optimized RoHS APPLICATIONS Load Switch PA Switch COMPLIANT TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code (3) G AQ XXX Lot Traceability and Date Code Part # Code (1, 2, 5, 6) D 3 4 2.85 mm Ordering Information: Si3471CDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 12 ±8 - 8a - 8a - 7.4b, c - 5.9b, c - 20 - 3.2 - 1.67b, c 3.8 2.4 2.0b, c 1.3b, c - 55 to 150 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) b, d t≤5s Steady State Symbol RthJA RthJF Typical 55 27 Maximum 62.5 33 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 69943 S-80434-Rev. A, 03-Mar-08 www.vishay.com 1 D...