P-Channel MOSFET
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Si3469DV
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V...
Description
www.DataSheet.co.kr
Si3469DV
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
−20
D TrenchFETr Power MOSFET ID (A)
−6.7 −5.1
rDS(on) (W)
0.030 @ VGS = −10 V 0.051 @ VGS = −4.5 V
APPLICATIONS
D Load Switch − Notebook PC − Game Machine − Desktop
TSOP-6 Top View
1 3 mm 6 5
(4) S
(3) G
2
3
4 (1, 2, 5, 6) D
2.85 mm Ordering Information: Si3469DV-T1—E3 (Lead Free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−20 "20
Unit
V
−6.7 −5.3 −25 −1.7 2.0 1.3 −55 to 150
−5.0 −4.0 A
−0.95 1.14 0.73 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72676 S-40271—Rev. A, 23-Feb-04 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
45 90 25
Maximum
62.5 110 30
Unit
_C/W
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si3469DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current...
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