SI2337DS

www.vishay.com Si2337DS Vishay Siliconix P-Channel 80 V (D-S) MOSFET SOT-23 (TO-236) D 3 FEATURES TrenchFET® power MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Marking code: E7 1 G Top View 2 S S G Available PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -6 V Qg typ. (nC) ID (A) a Configuration ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free -80 0.270 0.303 7 -2.2 Single SOT-23 Si2337DS-T1-E3 Si2337DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Continuous source-drain diode current Avalanche current Single-pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg D P-Channel MOSFET LIMIT -80 ± 20 -2.2 -1.75 -1.2 b, c -0.96 b, c -7 -2.1 -0.63 b, c 11 6 2.5 1.6 0.76 b, c 0.48 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, d t  10 s Maximum junction-to-foot (drain) Steady state Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state condition...