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Si1958DH
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.205 at VGS = 4.5 V 0.340 at VGS = 2.5 V ID (A)a 1.3
a
FEATURES
Qg (Typ.) 1.2 nC
1.3a
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code CC XX YY G1 2 5 G2
• Load Switch for Portable Applications
D1
D2
D2
3
4
S2
Lot Traceability and Date Code Part # Code
G1
G2
Top View Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free) Si1958DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
d, e
Symbol VDS VGS
Limit 20 ± 12 1.3a 1.3a 1.3a 1.2a
Unit V
ID
A
IDM IS
4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260
PD
W
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74340 S10-0792-Rev. C, 05-Apr-10 www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
Symbol t≤5s Steady State RthJA RthJF
Typical 130 80
Maximum 170 100
Unit °C/W
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Si1958DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1.2 A, VGS = 0 V 0.85 20 15 16 4 TC = 25 °C 1 4 1.2 40 30 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 1.5 A VDS = 10 V, VGS = 4.5 V, ID = 1.6 A V.