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SI1958DH Dataheets PDF



Part Number SI1958DH
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual N-Channel MOSFET
Datasheet SI1958DH DatasheetSI1958DH Datasheet (PDF)

www.DataSheet.co.kr Si1958DH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.205 at VGS = 4.5 V 0.340 at VGS = 2.5 V ID (A)a 1.3 a FEATURES Qg (Typ.) 1.2 nC 1.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CC XX YY G1 2 5 G2 • Load Switch for Portable Applications D1 D2 D2 3 4 S2 Lot Traceability and Dat.

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www.DataSheet.co.kr Si1958DH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.205 at VGS = 4.5 V 0.340 at VGS = 2.5 V ID (A)a 1.3 a FEATURES Qg (Typ.) 1.2 nC 1.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code CC XX YY G1 2 5 G2 • Load Switch for Portable Applications D1 D2 D2 3 4 S2 Lot Traceability and Date Code Part # Code G1 G2 Top View Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free) Si1958DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e Symbol VDS VGS Limit 20 ± 12 1.3a 1.3a 1.3a 1.2a Unit V ID A IDM IS 4 1.0 0.61c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 PD W TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 °C/W. Document Number: 74340 S10-0792-Rev. C, 05-Apr-10 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ Symbol t≤5s Steady State RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W www.DataSheet.co.kr Si1958DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1.2 A, VGS = 0 V 0.85 20 15 16 4 TC = 25 °C 1 4 1.2 40 30 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tr VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 1.5 A VDS = 10 V, VGS = 4.5 V, ID = 1.6 A V.


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