Part Number |
K1307 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1307 |
Datasheet |
K1307 Datasheet (PDF) |
www.DataSheet.co.kr
2SK1307
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
2SK1307
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 100 ±20 20 80 20 35 150 –55 to +150
Unit V V A A A W °C °C
2
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
2SK1307
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source bre.