PMD1602K

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Complement to type PMD1702K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 80 80 5.0 20 40 0.5 180 150 -65~200 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.97 UNIT ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN PMD1602K MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 80 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 40mA 2.8 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 3V 2.8 V ICER Collector Cutoff cu...