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MJ3773
Silicon NPN Power Transistor
Description
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@140V ·High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications. ·For ultimate circ...
Inchange Semiconductor
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