isc Silicon NPN Power Transistors
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= ...
isc Silicon
NPN Power
Transistors
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 500V (Min)-BUX31B
·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for off-line power supplies and are also well suited
for use in a wide range of inverter or converter circuits and pulse-width-modulated
regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
BUX31
800
BUX31A
900
V
BUX31B 1000
VCEO
Collector-Emitter Voltage
BUX31
400
BUX31A
450
V
BUX31B
500
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
150
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.0 ℃/W
BUX31/A/B
·
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BUX31 BUX31A IC= 50mA ; IB= 0 BUX31B
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
VBE(sat) ICB...