2SC2308

2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 30 30 5 100 –100 200 150 –55 to +150 2SC2308 55 50 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 1 2SC2308 Max — — — 0.5 0.5 500 0.2 0.75 — 3.5 10 — — — — Min 55 50 5 — — 100 — — — — — — — — — Typ — — — — — — — 0.67 230 1.8 4 16.5 70 130 11.0 Max — — — 0.5 0.5 320 0.2 0.75 — 3.5 10 — — — — µS V V MHz pF dB kΩ × 10 –6 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 Ω VCE = 5V, IC = 0.1mA, f = 270 Hz Min 30 30 5 — — 100 — — — — — — — — — Typ — — — — — — — 0.67 230 1.8 4 16.5 70 130 11.0 DC curren...