STL13NM60N

STL13NM60N N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 3 6 6 * %RWWRPYLHZ ' 3RZHU)/$7Œ[+9 Order code VDS @ Tjmax STL13NM60N 650 V RDS(on) max. 0.385 Ω ID 10 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram ' * Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 !-V Order code STL13NM60N Table 1. Device summary Marking Packages 13NM60N PowerFLAT™ 8x8 HV Packaging Tape and reel November 2013 This is information on...