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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING
4-C2
24.0+/-0.6
High power...
