PCP1208

www.DataSheet.co.kr Ordering number : ENA1836 PCP1208 SANYO Semiconductors DATA SHEET PCP1208 Features NPN Epitaxial Planar Silicon Transistor LED Back Light High allowable power dissipation Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Conditions Ratings 220 200 8 0.7 2 140 1.3 3.5 150 -55 to +150 Unit V V V A A mA W W °C °C Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 1.5 Product & Package Information Package : PCP JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1000 pcs./reel Packing Type : TD 2.5 1.0 4.0 Marking LOT No. 1 0.4 0.5 1.5 3.0 2 3 0.4 TD Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 SANYO : PCP http://semicon.sanyo.com/en/network 12611CB TKIM TC-00002563 No. A1836-1/4 Datasheet pdf - http://www.DataSheet4U.net/ QO www.DataSheet.co.kr PCP1208 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitanc...