N-Channel Silicon MOSFET
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Ordering number : ENA0162
MCH6422
N-Channel Silicon MOSFET
MCH6422
Features
• • •
General-Purpo...
Description
www.DataSheet.co.kr
Ordering number : ENA0162
MCH6422
N-Channel Silicon MOSFET
MCH6422
Features
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings 60 ±10 2 8 1.5 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 0.4 1.8 3.6 170 190 325 29 21 11 17 40 27 220 270 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
Marking : KW
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