GB75YF120UT

www.DataSheet.co.kr GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A FEATURES Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design ECONO2 4PACK Speed 8 kHz to 60 kHz Compliant to RoHS directive 2002/95/EC BENEFITS PRODUCT SUMMARY VCES IC at TC = 67 °C VCE(on) (typical) 1200 V 75 A 3.4 V Benchmark efficiency for SMPS appreciation in particular HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink space saving PCB solderable terminals Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current See fig. C.T.5 Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Maximum power dissipation (IGBT) Maximum operating junction temperature Storage temperature range Isolation voltage SYMBOL VCES IC ICM ILM IF IFM VGE PD TJ TStg VISOL TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 100 67 200 200 60 40 150 ± 20 480 270 150 - 40 to + 125 AC 2500 (MIN) V W A UNITS V °C V Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GB75YF120UT Vishay High Power Products IGBT Fourpack Modul...