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GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A
FEATURES
• Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient
INT-A-PAK
• HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996
PRODUCT SUMMARY
VCES IC DC VCE(on) at 200 A, 25 °C 600 V 209 A 2.6 V
• Compliant to RoHS directive 2002/95/EC • Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application • Rugged transient performance • Direct mounting on heatsink • Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation Isolation voltage SYMBOL VCES IC ICM ILM IF VGE PD VISOL TC = 25 °C TC = 80 °C Any terminal to case, t = 1 minute TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 209 142 400 A 400 178 121 ± 20 781 W 438 2500 V V UNITS V
Document Number: 94503 Revision: 04-May-10
For technical questions, contact:
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) TEST CONDITIONS VGE = 0 V, IC = 500 μA VGE = 15 V, IC = 100 A Collector to emitter voltage VCE(on) VGE = 15 V, IC = 200 A VGE = 15 V, IC = 100 A, TJ = 125 °C VGE = 15 V, IC = 200 A, TJ = 125 °C Gate threshold voltage Collector to emitter leakage current VGE(th) ICES VCE = VGE, IC = 500 μA VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150 °C IC = 100 A Diode forward voltage drop VFM IC = 200 A IC = 100 A, TJ = 125 °C IC = 200 A, TJ = 125 °C Gate to emitter leakage current IGES VGE = ± 20 V MIN. 600 3 TYP. 1.95 2.6 2.28 3.14 4.2 0.005 0.01 1.39 1.64 1.32 1.67 MAX. 2.1 2.84 V 2.5 3.48 6 0.2 mA 15 1.78 2.2 V 1.69 2.30 ± 200 nA UNITS
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Short circuit safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge SYMBOL Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA SCSOA trr Irr Qrr trr Irr Qrr IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 125 °C IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 25 °C TJ = 150 °C, IC = 400 A, Rg = 27 Ω, VGE = 15 V to 0 TJ = 150 °C, VCC = 400 V, VP = 600 V, Rg = 27 Ω, VGE = 15 V to 0 10 IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 Ω, L = 200 μH, TJ = 125 °C IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 Ω, L = 200 μH, TJ = 25 °C TEST CONDITIONS MIN. TYP. 3.65 6.9 10.55 3.8 7.8 11.6 507 133 538 92 Fullsquare 226 17 1900 290 25 3600 260 20 2600 330 30 5000 ns A nC ns A nC MAX. mJ ns UNITS
www.vishay.com 2
For technical questions, contact:
[email protected]
Document Number: 94503 Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB200TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Operating junction and storage temperature range IGBT Junction to case per leg Diode Case to sink per module case to heatsink Mounting torque case to terminal 1, 2, 3 Weight 185 3 g RthJC RthCS SYMBOL TJ, TStg MIN. - 40 TYP. 0.13 0.19 0.1 MAX. 150 0.16 0.32 4 Nm °C/W UNITS °C
300
300
Vge = 18V
250
Vge = 15V Vge = 12V
250
200
200
IcE (A)
IcE (A)
150
Vge = 9V
150
100
100
Tj = 125°C
50
50
Tj = 25°C
0 0 1 2 3 4
0 0 1 2 3 4 5 6 7 8 9
VCE (V)
VGE (V)
Fig. 1 - Typical IGBT Output Characteristics TJ = 25 °C, tp = 500 μs
300
3.5
Fig. 3 - Typical Transfer Characteristics VCE = 20 V, tp = 500 μs
VCE, Collector -to-Emitter Voltage (V)
250
Vge = 18V Vge = 15V Vge = 12V
Ic = 200A 3
200
IcE (A)
2.5
Ic = 100A
150
Vge = 9V
2 Ic = 50A 1.5
100
50
0 0 1 2 3 4 5
1 0 40 80 120 160
VCE (V)
TJ, Junction Temperature (°C)
Fig. 2 - Typical IGBT Output Characteristics TJ = 125 °C, tp = 500 μs
Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature
Document Number: 94503 Revision: 04-May-10
For technical questions, contact:
[email protected]
www.vishay.com 3
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Pro.