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GB200TS60NPBF Dataheets PDF



Part Number GB200TS60NPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Ultrafast Speed IGBT
Datasheet GB200TS60NPBF DatasheetGB200TS60NPBF Datasheet (PDF)

www.DataSheet.co.kr GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient INT-A-PAK • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 .

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www.DataSheet.co.kr GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient INT-A-PAK • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 PRODUCT SUMMARY VCES IC DC VCE(on) at 200 A, 25 °C 600 V 209 A 2.6 V • Compliant to RoHS directive 2002/95/EC • Designed for industrial level BENEFITS • Benchmark efficiency for UPS and welding application • Rugged transient performance • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation Isolation voltage SYMBOL VCES IC ICM ILM IF VGE PD VISOL TC = 25 °C TC = 80 °C Any terminal to case, t = 1 minute TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 209 142 400 A 400 178 121 ± 20 781 W 438 2500 V V UNITS V Document Number: 94503 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) TEST CONDITIONS VGE = 0 V, IC = 500 μA VGE = 15 V, IC = 100 A Collector to emitter voltage VCE(on) VGE = 15 V, IC = 200 A VGE = 15 V, IC = 100 A, TJ = 125 °C VGE = 15 V, IC = 200 A, TJ = 125 °C Gate threshold voltage Collector to emitter leakage current VGE(th) ICES VCE = VGE, IC = 500 μA VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150 °C IC = 100 A Diode forward voltage drop VFM IC = 200 A IC = 100 A, TJ = 125 °C IC = 200 A, TJ = 125 °C Gate to emitter leakage current IGES VGE = ± 20 V MIN. 600 3 TYP. 1.95 2.6 2.28 3.14 4.2 0.005 0.01 1.39 1.64 1.32 1.67 MAX. 2.1 2.84 V 2.5 3.48 6 0.2 mA 15 1.78 2.2 V 1.69 2.30 ± 200 nA UNITS SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Short circuit safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge SYMBOL Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA SCSOA trr Irr Qrr trr Irr Qrr IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 125 °C IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 25 °C TJ = 150 °C, IC = 400 A, Rg = 27 Ω, VGE = 15 V to 0 TJ = 150 °C, VCC = 400 V, VP = 600 V, Rg = 27 Ω, VGE = 15 V to 0 10 IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 Ω, L = 200 μH, TJ = 125 °C IC = 200 A, VCC = 360 V, VGE = 15 V, Rg = 10 Ω, L = 200 μH, TJ = 25 °C TEST CONDITIONS MIN. TYP. 3.65 6.9 10.55 3.8 7.8 11.6 507 133 538 92 Fullsquare 226 17 1900 290 25 3600 260 20 2600 330 30 5000 ns A nC ns A nC MAX. mJ ns UNITS www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94503 Revision: 04-May-10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GB200TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 209 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range IGBT Junction to case per leg Diode Case to sink per module case to heatsink Mounting torque case to terminal 1, 2, 3 Weight 185 3 g RthJC RthCS SYMBOL TJ, TStg MIN. - 40 TYP. 0.13 0.19 0.1 MAX. 150 0.16 0.32 4 Nm °C/W UNITS °C 300 300 Vge = 18V 250 Vge = 15V Vge = 12V 250 200 200 IcE (A) IcE (A) 150 Vge = 9V 150 100 100 Tj = 125°C 50 50 Tj = 25°C 0 0 1 2 3 4 0 0 1 2 3 4 5 6 7 8 9 VCE (V) VGE (V) Fig. 1 - Typical IGBT Output Characteristics TJ = 25 °C, tp = 500 μs 300 3.5 Fig. 3 - Typical Transfer Characteristics VCE = 20 V, tp = 500 μs VCE, Collector -to-Emitter Voltage (V) 250 Vge = 18V Vge = 15V Vge = 12V Ic = 200A 3 200 IcE (A) 2.5 Ic = 100A 150 Vge = 9V 2 Ic = 50A 1.5 100 50 0 0 1 2 3 4 5 1 0 40 80 120 160 VCE (V) TJ, Junction Temperature (°C) Fig. 2 - Typical IGBT Output Characteristics TJ = 125 °C, tp = 500 μs Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 94503 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GB200TS60NPbF Vishay High Power Pro.


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