GA300TD60S

www.DataSheet.co.kr GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A FEATURES Generation 4 IGBT technology Standard: Optimized for hard switching speed DC to 1 kHz Low VCE(on) Square RBSOA HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC Dual INT-A-PAK Low Profile UL approved file E78996 Compliant to RoHS Directive 2002/95/EC Designed for industrial level PRODUCT SUMMARY VCES IC DC at TC = 25 °C VCE(on) (typical) at 300 A, 25 °C 600 V 530 A 1.24 V BENEFITS Increased operating efficiency Performance optimized as output inverter stage for TIG welding machines Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Gate to emitter voltage Maximum power dissipation (IGBT) RMS isolation voltage SYMBOL VCES IC (1) ICM ILM IF VGE PD VISOL TC = 25 °C TC = 80 °C Any terminal to case (VRMS t = 1 s, TJ = 25 °C) TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 530 376 800 A 800 219 145 ± 20 1136 W 636 3500 V V UNITS V Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Document Number: 93362 Revision: 31-May-11 For technical questions, contact: indmod...