GA100TS60SF

www.DataSheet.co.kr Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending VCES = 600V IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C Benefits Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK Absolute Maximum Ratings Parameters V CES IC I CM I LM V GE V ISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 130°C Max 600 220 100 440 440 ± 20 2500 780 312 Units V A V W www.irf.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GA100TS60SF Bulletin I27201 rev. A 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBRCES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.11 1.39 1.08 1.28 1.22 6 1 10 1.44 1.25 1.96 1.54 ± 250 nA V mA V V GE = 0V, I C = 1mA V GE = 15V, I C = 100A IC = 200A V GE = 15V, I C = 100A, T J = 125°C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J ...